Switched Low-Noise Amplifier Using Gyrator-Based Matching Network for TD-LTE/LTE-U/Mid-Band 5G and WLAN Applications
نویسندگان
چکیده
This paper presents a triple-band low-noise amplifier (LNA) fabricated using 0.18 ?m Complementary Metal-Oxide-Semiconductor (CMOS) process. The LNA uses double-peak load network with switched component to accomplish the operation. Moreover, noise reduction substrate resistor ameliorate performance is presented. Noise of 1.5 dB can be achieved at 2.5 GHz without additional dc power and extra manufacturing costs. An input matching technique realized simultaneously gyrator-based feedback topology. by dual-band mechanism. target frequencies are 2.3–2.7 GHz, 3.4–3.8 5.1–5.9 covering operating frequency bands time-division long-term evolution (TD-LTE), mid-band Fifth-generation (5G), LTE-unlicensed (LTE-U) band, Wireless LAN (WLAN) technology. measured gains figures 2.5, 3.5, 5.2 12.3, 15.3, 13.1 2.3, 2.2, 2.6 dB, respectively.
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ژورنال
عنوان ژورنال: Applied sciences
سال: 2021
ISSN: ['2076-3417']
DOI: https://doi.org/10.3390/app11041477